SBIR/STTR Research Award
Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic Films
Award amount
$137,881Program and phase
SBIR · Phase IAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- RoseStreet Laboratories
- Proposal award date
- 2010-02-23
- Contract end date
- 2011-02-28
- UEI
- SJTCNP4MMZ96
- Solicitation number
- 2009.2
- Topic code
- SB092-017
Research abstract
We propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
2 SBIR/STTR records share this UEI (2010). Reported award amounts total $800,383. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: Department of Defense