SBIR/STTR Research Award

Compact 2050 nm Semiconductor Diode Laser Master Oscillator

Award identifier b438d0f43e24cfe8785aeaf5e30b40228b328a1f456836ba337adf9f298273bfAwarding agency National Aeronautics and Space Administration

Award amount

$99,788

Program and phase

SBIR · Phase I

Award year

2010

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
EM4, Inc.
Proposal award date
2010-01-29
Contract end date
2010-07-29
UEI
ELMKGCKJAM25
Solicitation number
Not reported
Topic code
S1.01

Research abstract

This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered . Currently, DFB laser chips are not available COTS at this wavelength. However, EM4 has identified a stock of devices that may be used for initial proof-of-concept testing. Due to the very large size of optical isolators at this wavelength, an isolator will not be included in the package.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

4 SBIR/STTR records share this UEI (2005–2010). Reported award amounts total $869,032. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Aeronautics and Space Administration, Department of Defense

Agency intelligence

National Aeronautics and Space Administration

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