Zn(Mg,Cd)O Heterostructure Light Emitters

Recent developments in p-type doping of ZnO, a wide gap semiconductor with high potential for efficient, UV and visible LEDs and laser diodes, have enabled successful fabrication of ZnO LEDs with emission in the near UV. However, issues of p-type layer quality, reproducibility, and stability have hindered process in improving the LED''s efficiency. In this project, p-type doping processes will be developed that will enable efficiency increases to usable and commercial levels. ZnO-based heterostructures will be developed that will further add to the efficiency improvement and permit tunability over a wide range of the UV, from UVA to UVC, along with the visible range. Bulk ZnO substrates will be enhanced with the addition of Mg to reduce defect levels in the LEDs, improving both their efficiency and lifetime.