SBIR/STTR Research Award
Ultra-Low-Noise Infrared Detector Amplifier for Next Generation Standoff Detector
Award amount
$749,970Program and phase
STTR · Phase IIAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- EPIR TECHNOLOGIES INC
- Proposal award date
- 2009-09-24
- Contract end date
- 2010-09-24
- UEI
- M35KZKEQZYK3
- Solicitation number
- 2008.A
- Topic code
- A08-T017
Research abstract
This project aims to design, fabricate and characterize ultra-low-noise amplifiers for HgCdTe infrared detectors by using low-noise transistors as the active device and implementing novel noise cancellation schemes to reduce the noise figure of the amplif
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Operating Temperature, Broadband Visible/Infrared HgCdTe Photodetectors
- Near/Short Wavelength HgCdTe/Si-Based Infrared Focal Plane Arrays
- Defect Passivation for High Performance HgCdTe on Si
- Miniaturized Imaging Spectrometer Based on HgCdTe Infrared Focal Plane Arrays
- Low Temperature Thermoelectric Refrigeration with HgCdTe-based Superlattices
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
102 SBIR/STTR records share this UEI (1997–2016). Reported award amounts total $33,479,082. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Homeland Security, Department of Energy