Development of Nanoelectronic Materials and Devices, Based on Novel Metal-Oxide Interfaces

The recent discovery of a high-mobility two-dimensional electron gas at the interface between a polar oxide (LaAlO3) and a non-polar oxide (SrTiO3) has fueled significant interest in oxide-based electronics. The interface between these materials has been shown to be switchable between a metallic and insulating state when the LaAlO3 thickness is exactly 3 unit cells. The primary objective of this STTR effort is to develop key materials processes that will enable ultra-high-density logic and memory operations in novel physical systems. Phase I demonstrations will focus on the development of reliable methodologies for producing high-quality oxide heterostructures such as 3 unit cell thick LaAlO3 films deposited on TiO2-terminated SrTiO3 substrates. The effort addresses reliable high-density methods for producing ohmic contacts to the LaAlO3/SrTiO3 interface, and demonstration of a prototype transistor design. A three terminal device whose behavior is similar to a conventional FET will be fabricated and the operation of this device will be characterized extensively over the entire operating range (both voltage/current and frequency). Neocera is teaming up with University of Pittsburgh in undertaking this STTR effort.   BENEFIT: Successful accomplishment of program objectives will enable a novel oxide electronics-based platform for a variety of military and civilian applications. Examples include ultra-high density integration of reconfigurable logic and non-volatile memories with impact for lightweight low-power computing needs in land air & space vehicles. In the commercial sector, development of nanoscale memories and transistors may be applied to consumer electronics, sensitive charge detection, and biomedical applications.)