SBIR/STTR Research Award

SiC Avalanche Photodiodes and Arrays

Award identifier 69f3e0b8b2032b944ab613455d36c9249a9d2e520f1d73e73a7ca30425253feaAwarding agency National Aeronautics and Space Administration

Award amount

$600,000

Program and phase

SBIR · Phase II

Award year

2009

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
Aymont Technology, Inc.
Proposal award date
2009-03-06
Contract end date
2011-03-05
UEI
Not reported
Solicitation number
Not reported
Topic code
S1.05

Research abstract

In this Phase 2 SBIR program submitted to National Aeronautics and Space Administration (NASA) in response to Topic S1.05 (Detector Technologies for UV, X-Ray, Gamma-Ray and Cosmic-Ray Instruments), Aymont Technology, Inc. (Aymont) and GE Global Research will enable high-sensitivity ultraviolet imaging. We will build upon our Phase 1 result showing working SiC UV avalanche photodiodes with high quantum efficiency as well as GE's product expertise in SiC photodiodes. Our team will demonstrate 16 x 16 arrays of SiC photodiodes including electronics for visible-blind high-sensitivity ultraviolet (UV) detection. We will demonstrate imaging using these arrays at UV wavelengths. In order to enable large scale arrays needed for future NASA missions, we will also demonstrate a 3 x 3 array of SiC photodiodes and avalanche photodiodes without front side contacts. In Phase 3, this array will be scaled to VGA dimensions (640 x 480) and utilized by NASA and others as the best-performing choice for UV imaging in space, satellite, security, and other applications. Additionally, APD arrays will be enabled. These will give the capability of imaging where each pixel has the sensitivity of a PMT.

Technology keywords

Not reported

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Agency intelligence

National Aeronautics and Space Administration

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