SBIR/STTR Research Award

Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns

Award identifier b48f42553cf4e5a67b7817fef5bba9b198672b85dbe0d27540e055fb29fe1fbeAwarding agency National Aeronautics and Space Administration

Award amount

$99,789

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
nLight Photonics
Proposal award date
2009-01-22
Contract end date
2009-07-22
UEI
L7A6MYHETLS6
Solicitation number
Not reported
Topic code
S1.01

Research abstract

While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources typically lack the ultra-narrow (<50 kHz), ultra-stable output spectrum required for use in applications such as Doppler shift measurements of the tropospheric winds. Furthermore, similar sources which operate at 2.0 microns (a preferred wavelength for space-based atmospheric measurements) are simply unavailable. To fill this need, nLight proposes the parallel development of 1.5 and 2.0 micron injection seeding sources based on our well-established, wavelength-scalable, industry-leading InP semiconductor laser design.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

56 SBIR/STTR records share this UEI (2004–2013). Reported award amounts total $18,993,588. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy

Agency intelligence

National Aeronautics and Space Administration

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