SBIR/STTR Research Award

Scalable Solid-State Circuit Breaker (SSCB)

Award identifier b7f9717ce537c65300a52b68c3e2f29fe64c3f89da9615b36865953b7e172f05Awarding agency Department of Defense · Army

Award amount

$99,935

Program and phase

SBIR · Phase I

Award year

2008

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
SemiSouth Laboratories
Proposal award date
2008-12-15
Contract end date
2009-06-15
UEI
Not reported
Solicitation number
2008.1
Topic code
OSD08-EP6

Research abstract

Solid-state circuit breakers have significant advantage over electromechanically relays due to the use of various types of solid-state transistors used to control the power flow. These transistors are generally much faster than their mechanical counterparts, switching orders of magnitude, hence allowing superior fault isolation capabilities. Unfortunately, the currently available current and voltage range of solid-state circuit breakers do not cover the specifications for the MEA or Army hybrid vehicle requirements. The limitations of the current solid-state relays are inherent to the fact that the switching transistors are built upon silicon technology. Silicon Carbide (SiC) JFET technology from SemiSouth has the ability to dramatically eliminate this current limitation, and impact near-term revolutionary system insertion opportunities. The optimal solution will be to develop a complete Solid State Circuit Breaker based on this innovative, reliable, scalable SiC Vertical JFET technology. During this Phase I program, SemiSouth will develop leverage existing Air Force funded development and prototype funding of large area 800V/20A SiC VJFET devices to build a prototype 600V/50A SSCB module and provide complete characterization of the module’s electrical characteristics and thermal design space in anticipation of scaling the VJFETs and SSCB design to 1200V and 200A+.

Technology keywords

Not reported

Awards with the same topic code

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Agency intelligence

Department of Defense

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