High-Efficiency GaN HEMT SSPAs for S-band Radar

S and X-band radars are central to the Air and Missile defense capability of the US ballistic missile defense (BMD) systems. The objective of this Phase I program is to investigate various PA classes of operation and identify approaches with significantly improved efficiency. The strategy proposed in this SBIR Phase I proposal is to combine the benefits of high efficiency switching architectures with the power and bandwidth capability offered by GaN HEMTs. High efficiencies are possible through use of PA classes such as D, E or F that operate the transistor as a switch. Such approaches offer significant promise for high efficiency RF transmitters provided fundamental efforts are expended to overcome the technical challenges in the input and output matching designs posed in such approaches.