SBIR/STTR Research Award
Innovative Pulsing Technique to estimate junction temperature in Wide-bandgap devices
Award amount
$98,688Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- ACCEL-RF CORPORATION
- Proposal award date
- 2008-09-10
- Contract end date
- 2009-12-03
- UEI
- DA6MTCK6G4D5
- Solicitation number
- 2008.2
- Topic code
- N08-164
Research abstract
A simple and reliable method to estimate the channel temperature of GaN high electron mobility transistors (HEMT) is proposed. The technique is based on electrical measurements of performance related figures of merit (IDmax and RON) with a synchronized pulsed I-V setup. As our technique involves only electrical measurement, no special design in device geometry is required and packaged devices can be measured.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Innovative Wide Bandgap Accelerated Life Test and Reliability Prediction
- V/W-band Accelerated Life Test System
- V/W-band Accelerated Life Test System
- Low Cost Universal Reliability System On-A-Chip for Multi-Channel Characterization
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
5 SBIR/STTR records share this UEI (2008–2019). Reported award amounts total $2,099,673. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense