SBIR/STTR Research Award
High Efficiency InGaN Solar Cells
Award amount
$749,998Program and phase
SBIR · Phase IIAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Integrated Micro Sensors, Inc.
- Proposal award date
- 2008-06-09
- Contract end date
- 2010-06-09
- UEI
- HKDSBLXQQLL1
- Solicitation number
- 2007.1
- Topic code
- OSD07-ES4
Research abstract
The objective of this proposal is to develop InGaN photovoltaic devices with high conversion efficiencies for DOD concentrator terrestrial and AM0 orbital power generation. InGaN can be fabricated to span a wide bandgap range from ~0.7 to 3.4 eV and matches well to the solar emission. The combined thermal stability and radiation hardness higher than that of other solar cell materials currently in use, make InGaN a particularly attractive material for high concentration, high temperature, and space environments. The proposed work would result in two high performance products. One product will be an all-InGaN multijunction cell having high efficiencies with improved radiation hardness, excellent high temperature and chemical stability, and low toxicity. The second product will be an InGaN cell for synergistic near term incorporation into existing photovoltaic technologies as a tandem booster.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drastic Improvements in Bonding of Highly Dissimilar Materials
- High-Speed Radiation Tolerant Avalanche Photodiodes Based on InGaN for Space Altimeter Systems
- Miniature Intelligent Wireless Fire Detector System
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Efficiency Lightweight Triple Junction GaAs Solar Cells
- High Efficiency InGaN Solar Cells
- Advanced Multijunction Solar Cell & Concentrator System Development for DOD Terrestrial and Space Applications
- Advanced Multijunction Solar Cell on Misoriented GaAs Substrates
Research funding history
27 SBIR/STTR records share this UEI (2001–2013). Reported award amounts total $6,557,770. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Health and Human Services