Silicon-Based Infrared Imaging Sensor

Development of new short-wave infrared imaging sensors with signal processing electronics on the same substrate is critical for a number of military and commercial applications. The objective of this research is to develop a new generation of Ge-on-Si p-n heterojunction photodiodes that will culminate in a demonstration of a 64 x 64-pixel infrared imaging array. These photodiodes, whose feasibility was demonstrated in Phase I, offer the potential for the fabrication of imaging arrays with signal processing electronics co-located on the same silicon substrate. Phase II will pursue advanced development of the Ge-Si heterojunction photodiodes in order to reduce the leakage dark currents and increase the photogenerated current per unit of incident infrared power. The major milestone of the proposed work will be the demonstration of an imaging array (64 x 64), initially with hybridized read-out electronics. The initial design process of on-chip read-out electronics will also begin during Phase II.