Small Pixel High Sensivity IR Imaging Array

During the Phase II project, Multispectral Imaging will demonstrate that the use of innovative microcantilever sensing structures and associated detection electronics will enable the fabrication of 25 micron pitch long wave infrared imaging arrays with sensitivities approaching background limited performance. The Phase I effort demonstrated the technical feasibility of using capacitive sensing techniques in fully integrated CMOS readout circuits and MEMs sensor structures. Feasibility was demonstrated through modeling and analysis of the sensor structures, along with the fabrication of larger pixel pitch arrays that demonstrated the key features of the microcantilever sensor approach. Capacitively sensed, microcantilever based infrared sensors have demonstrated high conversion sensitivities of 50%/K or more without the 1/f and Johnson noise sources which are present in all thermoresistive microbolometers infrared cameras. Extensive modeling of 50, 25 and 17 micron pitched pixels shows that microcantilever sensor arrays are capable of near background limited performance. The Phase II effort will build upon the results of the Phase I work to fabricate 320 x 240 pixel imaging arrays with 25 micron pitch pixels that have the required sensitivity and temporal response specifications. Multispectral imaging will cost share in the fabrication and testing of these imaging arrays as outlined in the proposal.