SBIR/STTR Research Award

A Near-Infrared Photon Counting Camera for High Sensitivity Astronomical Observation

Award identifier 542dba3936cb668a966efde0e5d6aae396b664213dc4f9a72baf1db0abc8215dAwarding agency National Aeronautics and Space Administration

Award amount

$599,504

Program and phase

SBIR · Phase II

Award year

2008

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
Intevac, Inc.
Proposal award date
2007-12-18
Contract end date
2009-12-17
UEI
HDS3HJURLLU4
Solicitation number
Not reported
Topic code
S4.02

Research abstract

The innovation is a Near Infrared Photon-Counting Sensor (NIRPCS), an imaging device with sufficient sensitivity to capture the spectral signatures, in the wavelength range 0.9-1.7 um from very faint extra-solar targets and events with high resolution. The NIRPCS will have near zero read noise and dark rates below the read noise to support photon counting for frame capture times as high as 10 seconds. Up to 10/5 frames can be sequentially captured and digitally averaged. Important NASA applications for the NIRPCS include spectral measurements on extra-solar planets in search of water and bio-markers and measuring the dynamics of galaxies at high redshift to better understand the formation process. The technical objectives of Phase II are centered on more focused study on the behavior of the TE photocathode at the very low cooling temperatures anticipated for the ultimate implementation of this sensor technology by NASA for the astronomy application. The modeling results of the Phase I effort showed that reduction of the electric field in the InP, due to applied cathode bias, reduced the bias dependant hole avalanche and absorber generation contributions to the cathode dark current. Factors of 3.8x and 48.2x reduction in dark current resulted for two redesigned cathodes at an operational temperature of 200K and +2V cathode bias. This occurred by redesign of the epitaxial structure in which the p-doped cap layer was eliminated. However, too much reduction of the electric field in the InP may also reduce the escape probability of hot electrons in the InP to vacuum thereby reducing quantum efficiency. Therefore a technical Phase II objective is to execute a design of experiment (D.O.E) to determine the best epitxial design for maximum quantum efficiency and reduced dark current.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

10 SBIR/STTR records share this UEI (1997–2008). Reported award amounts total $2,782,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration

Agency intelligence

National Aeronautics and Space Administration

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