High-Power THz Generation from Yb-doped Lasers

Currently, there is great interest in the development of instrumentation and techniques for the generation, detection and analysis of THz frequency (i.e. millimeter and sub-millimeter wavelength) electromagnetic radiation. Higher-power sources would enable longer stand-off distances, greater depth penetration, and shorter integration times. We propose to develop a high power time-domain (TD) THz source based on a novel THz emitter driven by a compact, diode-pumped, high-power femtosecond oscillator based on a Yb:doped laser crystal. We will employ THz emitters fabricated from narrow-bandgap materials (internal-field-biased InN and external-field-biased GaInAs). With optimized performance the system will be capable of generating on the order of 1 mW of average THz power at repetition rate as high as 1 GHz. During the Phase I program, we will assemble the femtosecond oscillator and use it to test several THz emitters. The directly diode-pumped ultrafast laser represents an enabling technology, allowing ultrafast and THz systems to emerge from the laboratory and into widespread scientific and industrial applications.