High-Sensitivity UV Solid-State Photon-Counting Devices and Arrays

In Phase II of this SBIR project, Magnolia Optical Technologies in collaboration with research partner Georgia Institute of Technology, propose to advance the development of AlGaN-based ultraviolet deep-UV (DUV) and far-UV (FUV) single-photon avalanche detectors (SPADs) using the well-developed Si photomultiplier (SiPM) concept and then, in future SBIR Phases, to commercialize practical devices. Our team has collaborated on the development of III-N avalanche photodiodes (APDs) in the past. Our overall innovation in this SBIR will be to ultimately create the III-N analog of the SiPM: a back-illuminated hybrid FUV SPAD-focal-plane array (FPA) device coupled to a Si CMOS read-out integrated circuit (ROIC). This Phase II funding will allow our teams to further develop unique concepts that will greatly improve the UV and FUV performance of critical sensor systems based on the III-N materials. We will demonstrate improved performance UV APDs operating in both photovoltaic and Geiger Mode. This work will create the next technology readiness level for “solar-blind” III-N SPADs and III-N photomultipliers (PMs) following the concepts employed in the successful commercial development of Si-based PMs operating in the longer-wavelength regions. We expect that the NASA programs Explorers, Discovery, Cosmic Origins, Physics of the Cosmos, Habitable World Observatory, Solar-Terrestrial Probes, Vision Missions, and Earth Science Decadal Survey missions will all benefit from our technology development. In addition, such III-N UV SPADs will have an impact in related research areas, and many applications outside the realms of basic research, e.g., defense systems, biological applications, and medical imaging. Any new development is thus likely to have an impact in a broad range of applications within NASA, and in other defense, scientific and commercial application spheres.