SBIR/STTR Research Award

New Sensing Capabilities for Space Situational Awareness

Award identifier 41961eef985c5f48ad837b6cdb4c734cf56b7a180221cec9b6f05aa9f37bfa7cAwarding agency Department of Defense · Air Force

Award amount

$749,998

Program and phase

SBIR · Phase II

Award year

2007

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
PHOTRONIX
Proposal award date
2007-03-20
Contract end date
2009-06-12
UEI
Not reported
Solicitation number
2006.1
Topic code
AF06-268

Research abstract

This proposal addresses “New Sensing Capabilities for Space Situational Awareness" and describes a revolutionary approach for developing large field-of-view, high-sensitivity VLWIR sensors to detect and track space objects. Our revolutionary approach is to develop a new junction architecture, the lateral-collection planar micro-junction based on single-layer Liquid Phased Epitaxy (LPE), that is more tolerant of defects and that eliminates interfaces and process steps where contamination and defects can be introduced. This new technology will be compatible with usual silicon Read Out Integrated Circuits (ROICs) for back illuminated Focal Plane Arrays (FPAs). The proposed planar lateral-collection micro-junction is a new junction architecture for HgCdTe that has important benefits over traditional two-layer LPE mesa structure, which should lead to improved operability and array yield. Because it is a planar architecture, the thickness and quality of the critical CdTe passivation layer is more controllable and reproducible. Small-area unit cells, below 20x20 µm², are facilitated. Operability and yield should both be improved because the new fabrication process is much simpler. The mesa etch step is eliminated, and there is no need for LPE growth of a second HgCdTe layer. Photolithography on planar surfaces is also easier. Supporting Photronix in this effort is BAE SYSTEMS.

Technology keywords

Not reported

Awards with the same topic code

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Agency intelligence

Department of Defense

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