Ultra-Linear High Efficiency GaN based microwave integrated Circuits

The goal of this program is to develop high linearity and high efficiency power amplifiers through innovative ultra linear transistors and digital signal processing (DSP) circuit linearization techniques for airborne or UAV applications. Specifically, we will demonstrate average output power, PAE, and inter-modulation distortion (IMD) of 150 Watts, 50% and -50 dBc respectively for the L- band monolithic microwave power integrated circuits. The proposed L-band monolithic microwave power integrated circuits will be based on a combination of novel semiconductor device and circuit design to achieve high linearity, high efficiency and output power. In Phase I, we will design, fabricate and test the ultra-linear GaN FETs and demonstrate 10 dB power gain, and 10 watt output power and minimum power added efficiency of 45% as well as third order intercept point (IP3) greater than 25 dB above the 1 dB compression point (P1dB) at L-band frequencies. In Phase II, we will develop prototype high linearity-high efficiency power amplifier architectures and demonstrate 150 watt average output power with peak-to-average power ratio between 8 to 12 dB, 50% PAE, 30 MHz instantaneous bandwidth and –50 dBc IMD.BENEFITS: This proposed project would result in the commercialization of ultralinear, power efficient, high power amplifier modules which will be used to produce the next generation of airborne communication systems. The power amplifiers that can be developed using this technology will benefit the US Navy’s E-2 Advanced Hawkeye program and naval shipborne communication systems where antennas in close proximity place a premium on linearity and efficiency. In addition, it will benefit a variety of DoD tactical missile defense programs, where power efficient phased arrays are critical. Commercial applications include components for wireless and satellite communications.