Novel cost-effective technical approach for fabrication of large area (6-inch) GaN and AlN epi wafers

TDI proposes to develop innovative cost-effective manufacturing technology for thick (>200 microns) low defect GaN and AlN epitaxial materials on large area substrates. Proposed technical approach is based on hydride vapor phase epitaxy (HVPE). The HVPE technology is known to produce GaN epitaxial layers with low defect density and high carrier mobility. Recently, TDI has demonstrated world first 6-inch GaN epitaxy. These results open an opportunity to develop novel technology of low defect thick GaN and AlN materials on large area substrates. The Phase II research program will be focused on defect and stress control in thick crack free AlN and GaN layers. The development involves investigation of deposition process and detailed material characteristics of thick GaN and AlN layers grown on large area substrates by HVPE.