SBIR/STTR Research Award
Ultra-Lightweight, High-efficiency (45%) Si-Based Triple Junction Solar
Award amount
$749,516Program and phase
SBIR · Phase IIAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- EpiWorks, Inc.
- Proposal award date
- 2006-04-05
- Contract end date
- 2008-07-03
- UEI
- Not reported
- Solicitation number
- 2005.1
- Topic code
- AF05-023
Research abstract
Next-generation satellites require increased payload mass and power budget capabilities. Ultra lightweight, 40% efficient solar cells employing Silicon substrates will allow for a significant power level scale up for a fixed solar panel size. The purpose of this proposal is to successfully demonstrate a high-efficiency Si-based solar cell technology. To achieve this goal, we ultimately will develop triple junction solar cells that employ Si substrates as a 1.1 eV bottom cell and heterogeneous III-V layers as a 1.5-1.7 eV middle cell and 1.9-2.1 eV top cell. Our advanced, next generation design will enable extremely high efficiency by using materials with ideal band gaps for the highest possible efficiency solar cells, and Si substrates (> 2x lower density than Ge) will reduce the solar cell payload mass by more than two times over current Ge-based technology.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- A New Class Of High Efficiency, High Specific Power, Multi-junction Photovoltaic Cells Using Wafer Bonding And Layer Transfer
- High Efficiency InGaN Solar Cells
- High Efficiency InGaN Solar Cells
- Next-Generation 30-45% Efficient Multi-Junction Solar Cell