SBIR/STTR Research Award
High Frequency Optoelectronc Oscillator
Award amount
$749,952Program and phase
SBIR · Phase IIAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- OPEL
- Proposal award date
- 2006-04-05
- Contract end date
- 2008-07-07
- UEI
- Not reported
- Solicitation number
- 2005.1
- Topic code
- AF05-043
Research abstract
Low phase noise oscillators are core components for communications and radars. System timing jitter is fundamentally important for digital systems and phase noise is the figure of merit for RF systems. For multi-GB/s clocks, optoelectronic oscillators using optical delay for the clock period, appear to have significant advantages. The phase noise may be minimized because the delay variability lies only in stability of the refractive index, providing low noise figure devices are available. The significant phase noise may then be relegated to the clock period adjustment mechanism and the RIN noise on the optical source. Optoelectronic oscillators have been reported that use a collection of lasers, modulators, delays and RF amplifiers. Although phase noise is improved, the system is bulky and power consumptive. OPEL’s integrated version is based upon a non-linear switching device that performs as both a laser source and detector. Monolithically integrated control HFETs and optical waveguides, enable an oscillator with minimal chip space and phase noise approaching the quantum limit, since the RIN noise is that of the VCSEL (-160dB/Hz). The control noise is only the shot noise on the injection current (<10fs jitter). The Phase II effort will fabricate and demonstrate the first multi-GB/s monolithic OEO.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Novel Integrated X-band and Ku-band Voltage Controlled Oscillator (VCO) MMICs
- High Frequency Optoelectronc Oscillator