High-Power Non-Cryogenic Semiconductor Lasers for Infrared Countermeasure (IRCM) Applications

High power, high efficiency 4.7-um semiconductor diode lasers which operate at room temperature are a key enabling technology for low cost, light weight infra-red counter measure systems. nLight proposes to combine (1) proven nLight high performance 8-µm MOCVD quantum Cascade InP diode technology with (2) commercial nLight high performance water-cooled micro-channel heat-sinks and (3) proven nLight InP re-growth technology to generate optimized 4.7-µm semiconductor diode laser sources with > 1W CW output at room temperature. Lessons from nLight’s work on the DARPA SHEDs high efficiency diode laser program will enable peak power conversion in excess of 10%. nLight will collaborate closely with key DoD IRCM vendors to ensure smooth and early commercial availability of diode products. In addition to optimizing performance and proving reliability, high beam quality and high power will be ensured in Phase 2 by transferring photonic crystal designs and external mode locking techniques under development in other funded programs.BENEFITS: DoD customers have expressed an interest in procuring these devices in addition to US prime contractors. nLight intends to include these key DoD prime contractors in the Phase 2 and Phase 1 programs to ensure the development is most likely to lead to volume commercial supply of components suitable for DoD applications. nLight Corp is also engaged with other commercial companies who have expressed strong interest in procuring high beam quality, narrow line-width Quantum Cascade laser diodes as soon as they are available.