SBIR/STTR Research Award

Optics Technologies for Cryogenic Sensors

Award identifier dc84079997055cb1cadf7951b875851cb48a67ae1a040c9510775c99b463b45cAwarding agency Department of Defense · Missile Defense Agency

Award amount

$99,956

Program and phase

SBIR · Phase I

Award year

2006

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
RAPT Industries, Inc.
Proposal award date
2006-03-06
Contract end date
2006-09-06
UEI
Not reported
Solicitation number
2005.3
Topic code
MDA05-015

Research abstract

Silicon Carbide (SiC) is a promising new material for optical substrates and structures for use in advanced cryogenic sensor systems. However conventional optical manufacturing technologies use abrasive-based grinding and polishing which leaves significant subsurface damage and residual stresses in the material. These residual stresses can lead to degradation of the optical performance of the system once it is deployed. We propose to demonstrate rapid damage-free shaping of lightweight aspheric SiC mirror substrates using Reactive Atom Plasma (RAP) processing. This novel technology allows for rapid and deterministic shaping of mirror surfaces while simultaneously removing the subsurface damage created during previous grinding steps.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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