SBIR/STTR Research Award

ZnO HEMTs on Flexible Substrates for Large Area Monolithic Antenna Applications

Award identifier 806ed09c5a4268cc170bc490e5956b558df66d29021fd8e0bc50a28fbe305fceAwarding agency National Aeronautics and Space Administration

Award amount

$70,000

Program and phase

SBIR · Phase I

Award year

2006

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
AMBP Technology Corporation
Proposal award date
2006-01-23
Contract end date
2006-07-24
UEI
Not reported
Solicitation number
Not reported
Topic code
S2.06

Research abstract

AMBP Tech will implement Zinc Oxide high mobility material technology it has developed specifically for flexible electronics into a direct write process onto large area polymer membranes. The implementation of this technology will form the core components of transmit/receive components of a synthethic aperture radar flexible antenna that can operate in the L-band and enable imaging of the earth from GEO and MEO orbits. The core issues that will be addressed in the Phase I program will include the demonstration that the high mobility material translates to high frequency response transistors suitable for power and signal amplification in transmit/receive modules, development of a low temperature ohmic contact forming process, exploration of advance FET ZnO device layer architectures, and most importantly the demonstration of the direct write capability of the LAMBD technology. In Phase II, AMPB Tech will integrate these process modules with other metal and dielectric direct write technologies to realized monolithic transmit/receive modules directly on a polyimide substrate and demonstrate a small 2D Synthethic Aperture Radar Antenna Array.

Technology keywords

Not reported

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Agency intelligence

National Aeronautics and Space Administration

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