SBIR/STTR Research Award

Combined sub mm TWT and BWO with Biplanar Interdigital Circuit

Award identifier 49d92ab671cf360b19ec931a5d57cac0b87a80245dab23700f272ae67ca9a1b4Awarding agency Department of Defense · Army

Award amount

$119,875

Program and phase

SBIR · Phase I

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
GENVAC HOLDINGS, LTD., DBA: TERAPHYSICS
Proposal award date
2005-12-10
Contract end date
2006-05-09
UEI
Not reported
Solicitation number
2005.2
Topic code
A05-040

Research abstract

We propose to develop a tunable one-Watt signal source, nominally centered at 650 GHz, comprised of a backward wave oscillator (BWO) that provides a signal that is amplified by a traveling wave tube (TWT). The BWO and the TWT are fabricated as a unit on the same substrate using standard silicon lithography and processes of chemical vapor deposition (CVD) of diamond that are proprietary to GENVAC. Both the BWO and the TWT utilize the novel biplanar interdigital slow wave circuit recently introduced by GENVAC. Utilizing a process discovered recently at GENVAC, widely available, cost effective silicon fabrication technology will be used to form a negative of the desired diamond structure that will serve as a mold for the deposition of the diamond. The structure will be formed in two halves and then accurately positioned and bonded using techniques routinely employed in the fabrication of liquid crystal displays. In order to provide precise alignment of the electron gun with the slow wave circuit, these elements will be formed as a single unit. A practical, credible, step-by-step process has been devised to fabricate the proposed BWO/TWT.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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