Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

ABSTRACT: Several new high-power, long range radar systems are under development for near-term upgrades or fielding by MDA, Navy, and Marine Corps, which will use High Voltage GaAs or new WBG Semiconductors (SiC, GaN) in the transmitter/receiver. These systems will require compact, efficient, temperature tolerant power supplies and converters typically requiring a 600 V class of power devices. SiC is a logical candidate for such applications. However, reliable and affordable device technology is essential to realize the theoretical benefits of SiC in these critical applications. In order to determine if SiC is ready for insertion in these applications, this Phase II will fabricate devices using SemiSouth 4H-SiC VJFET and SBD technology designed to meet the current, voltage, high temperature, and radiation hardness required for MDA radar power supply applications. These parts will then be tested individually in high temperature and high radiation environments and then tested in a circuit of direct relevance to the applications above. The results of this work will provide a fact based timeline for insertion of SiC devices for power conditioning applications that will extend past the applications listed here into many other applications such as motor drives for more or all electric aircraft.