Efficient High Power Amplification Technology for Munitions

SBIR Phase-I program investigation into a Wide Band Gap (WBG) technology and its ability to meet the Air Force specifications for a High Power Amplifier (HPA) demonstrated unequivocally the feasibility of meeting/exceeding this objective with GaN HEMT devices. The 50W power achievable over a multi-octave bandwidth of [200MHz-1,000MHz] and [1,000MHz-4,000MHz] with efficiencies [PAE] exceeding 40%, coupled with high temperature operation [< 600C] and high break-down voltage [< 100V] make this technology ideally suited for efficient battery operation. F&H proposes Phase II program aiming at the development of a prototype GaN HPA for Efficient High Power Amplification for Munitions. This program, solidly based on our Phase I results, will also avail this novel technology to numerous commercial applications including 3G & 4G [W-CDMA & UMTS] cellular base stations, LMDS, Repeaters and Emergency Services, among others. As the WBG technology moves from R&D to production, F&H intends to lead this effort bringing new products to market. We plan to achieve the commercialization objectives through teaming arrangements with established microwave components manufacturers, experienced in high volume production and having existing sales channel. We are currently involved in such negotiations. The necessary additional funding will be sought from available outside sources, as needed.