Radiation Hard Nonvolatile Chalcogenide-based Memories

Structured Materials Industries, Inc. (SMI), in collaboration with BAE SYSTEMS, will develop and demonstrate an improved production technology for chalcogenide-based nonvolatile memories using MOCVD. The goal of this project is to fabricate and test alloyed and doped, chalcogenide Ge2Sb2Te5 test structures grown by MOCVD for subsequent incorporation in standard CMOS process technology. In addition, we will develop a process and production tool model that will ultimately lead to improved manufacturability of these devices. This work will build on the current, joint efforts of SMI - a US leader in cutting-edge MOCVD technology - and BAE SYSTEMS - a worldwide leader in CMOS compatible, chalcogenide-based nonvolatile memory - to bring this technology to a manufacturable state. CMOS compatible chalcogenide-based nonvolatile memory technology exceeds the best features of current state-of-the-art SONOS technology without the inherent degradation and endurance limitations. The use of MOCVD affords sub-nm growth control and a proven production capability that promises to lead to improved device properties and thus, improved yield and product quality. For these reasons, SMI and BAE SYSTEMS are ideally suited to develop and commercialize this technology.