SBIR/STTR Research Award
Cost Effective Large Size Semi-Insulating Silicon Carbide (SiC) Ingots For Ballistic Missile Radar and RF Products
Award amount
$99,899Program and phase
SBIR · Phase IAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- 2005-03-04
- Contract end date
- 2005-09-04
- UEI
- Not reported
- Solicitation number
- 2004.4
- Topic code
- MDA04-111
Research abstract
In this proposal, INTRINSIC Semiconductor proposes unique and innovative semi-insulating (SI) SiC substrate process technologies that will impact next generation GaN and SiC device development, leading to innovative radar and RF discreet and monolithic microwave integrated circuit (MMIC) products. The technical objectives and the approaches to be pursued in this Phase I program are targeted for SI SiC manufacturing cost reduction via increased boule length (>30 mm) and bulk growth rate (> 1mm/hr).
Technology keywords
Not reported
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