SBIR/STTR Research Award

Rapid Damage-Free Shaping of Lightweight SiC Using Reactive Atom Plasma (RAP) Processing

Award identifier 7461a871191134d09c1b931d2af2201847fb8cba47576620abcd535404d26a7bAwarding agency National Aeronautics and Space Administration

Award amount

$69,968

Program and phase

SBIR · Phase I

Award year

2005

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
RAPT Industries, Inc.
Proposal award date
2005-01-21
Contract end date
2005-07-25
UEI
Not reported
Solicitation number
Not reported
Topic code
S2.04

Research abstract

The proposed effort seeks to determine the feasibility of dramatically reducing the manufacturing cost and cycle time of lightweight silicon carbide mirrors by substituting a novel reactive atom plasma (RAP) process for traditional hard tool grinding and lapping. The RAP process employs an inductively coupled plasma torch with common gaseous fluorine compounds to produce a spatially controlled material removal profile. The plasma is scanned over the surface of the material to be shaped under the control of special algorithms to produce the desired optical form. The RAP process exhibits high volumetric material removal rates on SiC and other optical materials. The avoidance of surface and subsurface damage by the use of this non-contact RAP process is expected to significantly reduce the time and cost of optical finishing. RAP-shaped substrates will be polished by several candidate technologies to establish optimum finishing strategies.

Technology keywords

Not reported

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Agency intelligence

National Aeronautics and Space Administration

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