SBIR/STTR Research Award
High Energy Density and High Thermally Rated Pulsed Power Capacitor Devices
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- AMBP Technology Corporation
- Proposal award date
- 2005-01-06
- Contract end date
- 2005-07-06
- UEI
- Not reported
- Solicitation number
- 2004.3
- Topic code
- OSD04-EP7
Research abstract
The proposed program by AMBP Tech and Professor Sarjeant's group at SUNY Buffalo will develop and demonstrate a rapid large area deposition process of high energy density amorphous fluorinated carbon (a-C:F) films onto thin aluminum (4um thin) electrode substrates. The innovative research consists of utilizing AMBP Tech's patented high deposition rate technologies of LAMBD or PAMBD tools to optimize the stoichiometry and morphology of a-C:F films in terms of the energy density. Feedback will be provided by evaluating the electrical characteristics of the films via the unique Partial Discharge (PD) analytical setup of the Energy Systems Institute (ESI) directed by Professor Sarjeant.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Novel high strength capacitor dielectrics
- High Performance Dielectric Thin Films Prepared by Homo-/Co-Polymerizations with a Modified Plasma Enhanced Chemical Vapor Deposition (PECVD) Techniqu
- Novel high strength capacitor dielectrics
- Novel Vacuum Deposited Dielectric Materials for Capacitor Devices
- Low-Cost Quasi-Amorphous Carbon Dielectrics for Pulsed Power Capacitors