SBIR/STTR Research Award

Advanced Packaging Concept for High Temperature Silicon Carbide Power Modules (kTC P214)

Award identifier acae4e1e89c53782307ffdcd159fad7a2262ca60d939d71625caeac012e3a63bAwarding agency Department of Defense · Army

Award amount

$729,386

Program and phase

SBIR · Phase II

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
k Technology Corporation
Proposal award date
2004-12-15
Contract end date
2006-12-15
UEI
Not reported
Solicitation number
2002.2
Topic code
A02-232

Research abstract

k Technology Corporation (kTC) proposes to develop an Integrated Thermal Module (ITM) to be an integral part of a high performance power electronics package using silicon carbide (SIC) devices. The module will optimize the heat transfer from the active silicon carbide to the cooling fluid. By minimizing the temperature rise through the package, the coolant temperature can be maximized, and therefore the heat exchanger can be made smaller. The proposed package material has high conductivity, low coefficient of thermal expansion, and low mass density. The high conductivity and low CTE will minimize the thermal impedance through the power electronics package. To demonstrate the effectiveness of the Integrated Thermal Module under realistic loads it will be integrated into a converter. The converter will be tested with a permanent magnet motor and passive inductive loads.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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