SBIR/STTR Research Award
ZnO UV Detectors
Award amount
$599,999Program and phase
SBIR · Phase IIAward year
2005Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- MOXTRONICS, INC.
- Proposal award date
- 2004-12-14
- Contract end date
- 2006-12-14
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- S1.06
Research abstract
High-efficiency UV detectors will be developed in the Phase II program with ZnO and its alloy (ZnBeO). ZnO and ZnBeO are a very suitable material for fabrication of high-speed, high-detectivity, and radiation-hard UV detectors due to their unique structural, electrical and optical properties. The proposing company (MOXtronics) has shown the feasibility of fabricating new ZnO p-i-n UV detectors in the Phase I. Such UV photodiodes will be improved for high-efficiency UV detection by using heterojunction p-i-n structures and/or Schottky contacts. In the Phase II efforts, commercial-typed heteojunction ZnO/ZnBeO-based PIN and MSM photodiodes will be fabricated and demonstrated. These photodiodes will be used for broad near-to-far UV detection.
Technology keywords
Not reported
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