High Power Limiters based on Silicon Carbide (SiC), and Gallium Nitride (GaN) Device Technology for Phased Array Radar ( L,S and X-Band), Communicatio

Naval vessels today are equipped with a large variety of electronic equipment for radar functions, communications, navigation, countermeasures, and others. Many of those shipboard systems operate with transmitters emitting thousands of watts of power in microwave frequencies, and the presence of high-power transmitters in close proximity to sensitive receivers. This proposal is addressed to the development of broadband microwave limiters using wide band-gap devices of those technologies suitable for applications in microwave frequencies, namely silicon-carbide (SiC) PIN diodes. SiC transistors are used in high-power microwave amplifiers applications, but there have been virtually no studies of the application of SiC devices as signal control devices such as switches and attenuators and limiters. The proposed program will be focused on development of limiters for receiver protection. The Phase 1 effort will lead to a full assessment of SiC PIN capabilities for microwave limiter applications, definition of design goals for broadband limiters and design approaches. The ensuing Phase 2 program will be focused on design, fabrication and characterization of SiC PIN devices and limiters. Successful implementation of limiters in compact form will protect sensitive shipboard receivers against both friendly radar emissions and hostile high-power microwave (HPM) threats.