Silicon Light-Controlled Passive Elements for High Speed, High Power Electronics

The U.S. Army needs advanced communication and attack systems technology for the Joint Tactical Radio Systems (JTRS) and the Future Combat Systems (FCS). JTRS and FCS include high-power devices such as RF power amplifiers (PA), matching networks and antennas with electronically tunable switches. Existing RF switching technologies are limited by low tuning range, poor power handling, signal loss, and coupling between control and signal lines. To remove these limitations, Physical Optics Corporation proposed and in Phase I successfully developed the Silicon Light-Controlled (SiLC) RF switching device, which will handle power over 300 W, and will have a tuning range of more than 7:1, a switching time of 15 microseconds, and separated control and RF lines. SiLC technology is compatible with existing semiconductor technology, and avoids the problems inherent in current RF switches. In Phase II we will optimize and fabricate the SiLC RF switch as a fully operational preproduction prototype for RF power amplifiers for the U.S. Army JTRS and FCS Programs. The open architecture of the SiLC, and power handling up to 300 W or more, will make it easy to modify for any RF PAs, matching networks, and antennas for the 1.5 MHz to 3 GHz range.