SBIR/STTR Research Award
Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems
Award amount
$500,000Program and phase
STTR · Phase IIAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- SemiSouth Laboratories
- Proposal award date
- 2004-09-30
- Contract end date
- 2006-09-30
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- BMDO02T-00
Research abstract
SiC Integrated Circuits (IC''s) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC''s from Mississippi State University to SemiSouth Laboratories. The result will be precise controlled epitaxy layers (doping and thickness) in SiC, with abrupt transitions between n-type channel and heavily doped p-type gate regions, as well as demonstration of JFET IC''s in SiC.
Technology keywords
Not reported
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