SBIR/STTR Research Award

High Power Vacuum GaN

Award identifier 5ba87c4144a4aca695960d7dc2161911026684c8f896c8b21ec13801eb11a48aAwarding agency Department of Defense · Missile Defense Agency

Award amount

$98,496

Program and phase

STTR · Phase I

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Stellar Micro Devices
Proposal award date
2004-09-14
Contract end date
2005-03-13
UEI
Not reported
Solicitation number
Not reported
Topic code
MDA04-T013

Research abstract

High power GaN devices are proposed in which vacuum gaps increase anode voltage and power. Anode placement will be optimized for device performance and power dissipation.

Technology keywords

Not reported

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Agency intelligence

Department of Defense

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