SBIR/STTR Research Award
High Power Vacuum GaN
Award amount
$98,496Program and phase
STTR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Stellar Micro Devices
- Proposal award date
- 2004-09-14
- Contract end date
- 2005-03-13
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- MDA04-T013
Research abstract
High power GaN devices are proposed in which vacuum gaps increase anode voltage and power. Anode placement will be optimized for device performance and power dissipation.
Technology keywords
Not reported
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