High Performance Point Source LEDs

Long standing relationships with the Ioffe Institute have allowed ATEC to license novel LED technologies developed by Matveev and co-workers, including InGaAs LEDs that emit in the 3 to 5 um region and Negative Luminescence devices that are capable of simulating objects at temperatures below ambient. The goal of the proposed work is to adapt a high efficiency optically pumped GaAs LED stucture developed by Matveev and co-workers to demonstrate InGaAs LED point sources that operate in the 3 to 5 um region. These devices will provide both positive and negative luminescence output and extremely fast modulation speeds. Effective source radiation temperatures in excess of 600 degrees C and modulation speeds of up to 10 MHz are expected from these devices. Phase I will concentrate on demonstration of the device concept. Fabrication services will be provided by the Ioffe Institute, with technical consulting provided to ATEC by Matveev and co-workers. This approach, coupled with the use of a proven device architecture, substantially moderates the technical risk normally associated with development of new electro-optic devices in a small business environment. Phase II will focus on completion of prototype development and transfer of design and manufacturing responsibility to a US manufacturing partner, identified during Phase I.