SBIR/STTR Research Award

Monolithic Integration of Photonic and Electronic Devices for High Performance EPICs (Electronic-Photonic Integrated Circuits)

Award identifier 8f3d97f540c1ec8d3908c93f8331f70233d287878fc36bddf350bfa280a3c44bAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$90,000

Program and phase

SBIR · Phase I

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
ASIP, INC.
Proposal award date
2004-08-17
Contract end date
2005-04-15
UEI
Not reported
Solicitation number
2004.1
Topic code
SB041-031

Research abstract

In Phase 1 we will demonstrate the feasibility of integrating high-speed InP-based HEMTs with ASIP's proprietary asymmetric twin waveguide photonic integration technology. A common source HEMT driver transistor will be integrated with a simple, asymmetric twin waveguide (ATG) compatible laser. In Phase 2, we will extend this feasibility demonstration to demonstrate an EPIC consisting of a single wavelength, 1.55 um DFB laser integrated with an electroabsorption modulator (EML) and electronic circuitry to linearize the modulator response for use in analog transmission. On-chip electronics using the same high-speed transistor technology will also be used to demonstrate a low-speed electronic functionality of wavelength locking a 10Gb/s 1550nm, EML with an integrated wavelength sensitive optical element.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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