SBIR/STTR Research Award
Monolithic Integration of Photonic and Electronic Devices for High Performance EPICs (Electronic-Photonic Integrated Circuits)
Award amount
$90,000Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- ASIP, INC.
- Proposal award date
- 2004-08-17
- Contract end date
- 2005-04-15
- UEI
- Not reported
- Solicitation number
- 2004.1
- Topic code
- SB041-031
Research abstract
In Phase 1 we will demonstrate the feasibility of integrating high-speed InP-based HEMTs with ASIP's proprietary asymmetric twin waveguide photonic integration technology. A common source HEMT driver transistor will be integrated with a simple, asymmetric twin waveguide (ATG) compatible laser. In Phase 2, we will extend this feasibility demonstration to demonstrate an EPIC consisting of a single wavelength, 1.55 um DFB laser integrated with an electroabsorption modulator (EML) and electronic circuitry to linearize the modulator response for use in analog transmission. On-chip electronics using the same high-speed transistor technology will also be used to demonstrate a low-speed electronic functionality of wavelength locking a 10Gb/s 1550nm, EML with an integrated wavelength sensitive optical element.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Monolithically Integrated EPICs Incorporating HBT Driver/Electroabsorption Modulator Arrays with Linearized Output and Wide Bandwidth
- Monolithically Integrated EPICs incorporating HBT Driver/Electroabsorption Modulator Arrays with Linearized Output and Wide Bandwidth