Novel technology for high pure GaN thick layers for advanced X-Band electronic devices

TDI proposes to develop high purity GaN materials having room temperature carrier concentration from 1014 cm-2 down to 1012 cm-2 using novel technological approach based on advanced hydride vapor phase epitaxy (HVPE). The HVPE technology is known to produce epitaxial layers and bulk GaN materials with low defect density and high carrier mobility. Recently, TDI demonstrated HVPE growth of GaN and AlGaN layers with record low background impurity concentrations. These results opened an opportunity to develop ultra pure GaN and AlGaN materials including pure non-compensated semi-insulating GaN substrates and epitaxial layers for advanced radar electronics. The Phase I project is focused on investigation of HVPE technology for pure undoped GaN and AlGaN layers. The main goal of the Phase I work is to prove the concept and demonstrate pure GaN materials with carrier concentration in the 1013 - 1014 cm-3 rage. The Phase II research program will be focused on further reduction of background carrier concentration in pure GaN and AlGaN materials and demonstration of GaN-based devices with increased power and efficiency for X-Band Radars.