GaN-based Submillimeter Wave Quantum Emitter

WaveBand Corporation, in cooperation with the University of Michigan at Ann Arbor, is developing a new source of electromagnetic radiation in the terahertz spectral range. The source is based on an electrically driven III-Nitride semiconductor superlattice designed to deliver high-power and high-frequency current oscillations. The fabrication technology employs robust metal-organic vapor chemical deposition and molecular beam epitaxy. The operating frequency can be engineered by the geometry of the superlattice and is also tunable by the driving voltage. The source is free of geometrical constraints such as those that restrict the output power in resonant tunneling diodes. The source will find applications in target seekers, space communication systems, sensors, collision avoidance systems, atmospheric sensing, and sub-millimeter wave imaging.