Multi-Spectral Sensors and Cameras for Test Applications

Many MDA missions ask for compact image sensors capable of low power, high frame rate, mega-pixel resolution and efficient light detection over the entire 300nm to 1570nm wavelength range. e-Phocus has demonstrated a compact, low power, mega-pixel resolution and 30 Hz sensors over the visible spectrum (400nm - 700nm), using its patented Hi-SightTM technology with an amorphous silicon (a-Si) photodiode structure. The Hi-SightTM technology involves the coating of a multi-layer amorphous or microcrystalline photodiode structure on a CMOS readout integrated circuit, in order to provide a high performance image sensor with an imaging bandwidth potentially spanning the ultraviolet to near infrared spectrum. Under the Phase I e-Phocus showed a path to extend the ability of the Hi-SightTM technology to perform to 290nm in the UV using a surface anti-reflection layer structure, and to 900 nm in the Near IR using microcrystalline silicon (ƒYc-Si). e-Phocus also determined that with microcrytalline germanium (ƒYc-Ge) based photo-sensing heterostructure, the spectral response can be further extended to 1570nm. In this SBIR Phase-II program, e-Phocus intends to develop a ƒYc-Ge based photo-sensing hetero-structure, to be used on top of Hi-SightTM readout circuitry, which can extend sensor's spectral response towards 1570nm. The Phase II program will investigate the spectral response of ƒYc-Gebased photo-sensing heterostructure devices and its capability in supporting high frame rate sensors. e-Phocus intends to demonstrate that Hi-SightTM sensor architecture in conjunction of ƒYc-Ge photo-sensing structure will be a viable and cost-effective solution leading to image sensors with broadband sensing capability to support MDA's missions. The success of this program enables single monolithic, high frame rate, mega-pixel focal plane arrays sensitive in both the UV, visible and Near IR regimes.