SiC Power Converter

The goal of this research is to establish feasibility of constructing a power, control and driver module for a 60kW embedded converter. The power module uses an integrated packaging approach to support Silicon Carbide (SiC) device operation above 400 degree centigrade (400C) junction temperature. The high temperature is important to allow use of high resistance, off-the-shelf, SiC devices. The control and driver module are sandwiched and cooled to limit silicon-on-insulator (SOI) control circuits to 250C while also providing thermal management of interfacing interconnects. DCHopkins & Associates will complete a feasibility study addressing four topics: fabrication of a scalable, multiple-module system with thermally managed interconnects; selection of SiC devices (BJTs, JFETS, MOSFET) for reliable high temp operation; optimum electrical circuit partitioning and topology selection for maximum high frequency performance at high temperatures; and module fabrication of SiC devices, patterned interconnect, insulator and heat sink in a two-step process. The critical issues to be addressed are the reliable transport of thermal and electrical energies into and out of a highly dense converter. The feasibility study will include extended ambient (200C) and high ambient (300C) temperature operation, with the overall intent to demonstrate feasibility of reliably embedding the converter at the point-of-load (POL). DCHopkins & Associates will collaborate with the University at Buffalo to assess packaging reliability. A deliverable will be a preliminary layout for a multiple-module converter system to drive a dedicated actuator load.