SBIR/STTR Research Award

Bandgap Engineered Rad-Hard Multi-Function Digital MMW/Photonic Circuits

Award identifier da304c8857bef9bf066bb6f4f51286649e24cf6bb05e66662390307a3e8dec5cAwarding agency Department of Defense · Missile Defense Agency

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
TLC Precision Wafer Technology, Inc.
Proposal award date
2002-09-30
Contract end date
2004-09-30
UEI
Not reported
Solicitation number
2000.1
Topic code
BMDO00-014

Research abstract

TLC has developed an innovative multi-component radiation hard InP HEMT based chip approach that will provide monolithic digital,millimter-wave and photnic functions for airborne, spaceborne and other military systems. During phase I we demonstrated lattice engineering, epi growth, design and device fabriction capabilities that resulted in high performance electronic and photonic devices using InP based HEMT structures. The electronic and photonic devices were engineered for various frequencies and wavelengths respectively. A transition layer was also demonstrated that will allow multi-devices to be developed and demonstrated on the same epi wafer. Therefore in Phase II, TLC will develop the multi-functio digital/photonic/ MMW circuits simulation, designs, fabrication testing and delivery.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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