SBIR/STTR Research Award
Barium Titanate Formation for Electronic/Photonic Applications
Award amount
$484,074Program and phase
SBIR · Phase IIAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- INTEGRAL WAVE TECHNOLOGIES
- Proposal award date
- 2002-04-26
- Contract end date
- 2004-04-26
- UEI
- Not reported
- Solicitation number
- 2001.3
- Topic code
- MDA01-014
Research abstract
Integral Wave Technologies (for known as Arkansas Microelectronic Development Corporation) is developing a process for growing ferroelectric, polycrystalline barium titanate (BaTiO3) thin-films, by anodic oxidation of co-evaporated barium-titanium films (BaTi). Though films of this nature find applications in several electrical devices, Integral Wave will utilize this novel method of ferroelectric formation, Integral Wave will be able to obtain thin, uniform ferroelectric films that exhibit dielectric constants from approximately 150 to 1500. This will allow the fabrication of integral thin-film capacitors, which exhibit tremendous volume and space saving benefits over traditional discrete capacitors, and offering very large capacitance densities, from 1uf/cm2 up to 13uf/cm2. These values are over 2000 times greater than the value exhibited by the leading commercially available thing and thick-film dielectric. Since crystalline ferroelectrics have numerous applications as passive and active optical components, such as couplers, taps, attenuators, modulators, switches and wavelength converters, Integral Wave will utilize the low loss characteristic of these films and explore the potential application of this material in optical devices.
Technology keywords
Not reported