SBIR/STTR Research Award
Integrated, Widely Tunable Diode Laser with Narrow Linewidth
Award amount
$99,970Program and phase
SBIR · Phase IAward year
1996Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Corpetek, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Widely tunable diode laser arrays are critical building blocks of a variety of rapidly growing photonics technologies including wavelength-division-multiplexed (WDM) telecommunication and computer interconnect systems, high throughput optical data storage systems, wavelength multiplexed optical sensing, LIDAR systems, environmental and laboratory spectroscopic applications. For most such applications, an integrated optical approach with wide tuning range (>200nm) narrow linewidth (<1A) and fast single mode tuning (1nm/ns) is required. Currently no such device has been developed or commercialized. In response to this need CoreTek, Inc. proposes a novel, compact, optoelectrically tunable diode laser array system. Our novel integrated optic approach uses the electrooptic effect in an electrooptic crystal to electrically control the lasing wavelength of commercially available solid-state lasers. Unparallel capability including wide tunability range beyond 200 nm at 1550 nm, tuning speed faster than 1nm/ns and laser emission with ~3-10MHz linewidth are expected. Furthermore, CoreTek innovative method allows fabrication of compact arrays of individually tunable lasers. In Phase I, we will investigate the feasibility of the approach for 1550nm using a number of proposed methods. In Phase II, CoreTek will develop a solid manufacturing receipt necessary to build and commercialize reliable tunable InGaAlP (1550 nm) semiconductor laser packages in Phase III.
Technology keywords
Not reported