Solution Growth of Bulk Gallium Nitride

The primary impediment to large deployment of GaN has been the lack of suitable substrates on which to grow and fabricate optimum structures and devices. While GaN films are commonly grown on sapphire or silicon carbide substrates, the lattice mismatch ofthese materials with GaN results in a large number of defects and dislocations. Many of these problems would be eliminated if large bulk GaN crystals could be grown from which substrates could be fabricated for thin film growth. Accordingly, it is theobjective of this proposed research effort to investigate the solution growth of GaN at or near atmospheric pressure. This will be accomplished by identification of one or more suitable solvents in Phase I followed by controlled nucleation and largecrystal growth in Phase II. A perfectly lattice matched substrate will allow for nearly defect free semiconductor devices which will increase the lifetime, speed, and power handling capabilities of GaN devices. Commercial products include low cost, highefficiency, high brightness, long lifetime lighting and flat panel displays. High speed modulators and laser diode sources could rapidly enable the next generation of optical telecommunications technology. Solar blind uv detectors based on GaN are highlydesirable for rapid detection of missile launches and high power microwave devices allow for more powerful radar and wireless communications.