SBIR/STTR Research Award

Advanced Ultrafast Modelocked Diode Laser System as a Source for Nonlinear Optical Devices

Award identifier d02c4b94fe81378f9feacee49710417c5bd573fab35ef2194aec1efac3eda195Awarding agency Department of Commerce

Award amount

$49,668

Program and phase

SBIR · Phase I

Award year

1995

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Award details

Awarding agency
Department of Commerce
Branch
Not reported
Recipient company
Laser Ionics, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The proposed research is intended to be a major step in the development of a modelocked diode laser system, capable of replacing several expensive and complex components used in seeding of OPO, OPA, and OPG, with direct applications in non-linear optical diagnostics. The company has successfully demonstrated a modelocked diode laser system which features hybird modelocking and produces 100 picojoule pulses at 100 MHz. An advanced wide stripe semiconductor will be obtained and integrated during this effort. These components, in combination with changes to the optical cavity, are estimated to increase the output energy of this device by an order of magnitude, to over one nanojoule. Pulse duration of 200 femtoseconds has been achieved with the present design and the second objective of this research will be to shorten this to less than 150 femtoseconds by use of an innovative new type of saturable absorber. An additional objective of this work is to use the results of laboratory testing to evaluate three approaches to raising diode energy further, with a goal of 10 nanojoules. A design study documenting the best approach for achieving this level will be a work product of the project.

Technology keywords

Not reported

Agency intelligence

Department of Commerce

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