Ultra-Low Pinhole Simox

A PROGRAM IS PROPOSED TO EVALUATE THE IMPACT OF CHANNELING OF OXYGEN ON BURIED OXIDE XNTEGRITY IN SIMOX MATERIAL. BURIED OXIDE PINHOLEDENSITY AND CRYSTALLOGRAPHIC ORIENTATION RELATED PATTERNS IN BURIED OXIDE PINHOLE MAPS WILL BE EXPLAINED DEPENDING UPON THE IMPLANT ANGLE. THE METHOD BASED ON THE ELECTROYTIC PLATING OF COPPER WILL BE USED TO OBTAIN THE MAPS OF PINHOLES. THIS WORK WILL IMPROVE KNOWLEDGE OF CHANNELING OF OXYGEN IN SILICON AND ITS IMPACT ON SIMOX PROPERTIES. APPLICATION OF THE RESULTS WILL LEAD DIRECTLY TO THE IMPROVED INTEGRITY AND RELIABILITY OF BURIED OXIDE AND EXCELLENT UNIFORMITY OF THIN FILM LAYERS AT THE SAME TIME. ANOTHER IMPLICATION WOULD BE BETTER REPEATABILITY AND CONSISTENCY OF THE MATERIAL OBTAINED IN THE MANUFACTURING EUVIRONMEUT. DEVELOPMENT OF THE ULTRA-LOW PINHOLE SIMOX WITH THE ABOVE IMPROVEMENTS IN PROPERTIES AND BETTER CONSISTENCY IN MANUFACTURING WILL PROVIDE ADVANTAGES TO ALL SINOX CUSTOMERS AND MAY ALSO ENLARGE THE SIMOX MARKET.