Epitaxial Growth of SiC on Silicon for Radiation Hard Particle Detectors

181 Epitaxial Growth of SiC on Silicon for Radiation Hard Particle Detectors--Lawrence Semiconductor Research Laboratory, Inc., 2300 West Huntington Drive, Tempe, AZ 85282-3130; (602) 438-2300 Dr. Richard Westoff, Principal Investigator Lamonte H. Lawrence, Business Official DOE Grant No. DE-FG03-97ER82416 Amount: $74,873 An immediate and critical need exists for radiation hard detectors that can survive increased particle fluxes generated in upcoming high energy physics experiments. Current silicon strip detectors degrade quickly in this environment. Alternative polycrystalline diamond detectors face cost and processing issues, while gallium-arsenide detectors have shown poor resistance to proton impacts. This project is aimed at developing detectors for radiation hardness that overcome these problems by using silicon carbide on silicon materials. Phase I of this project is directed at growing high quality, epitaxial layers of cubic-phase silicon carbide on silicon substrates by chemical vapor deposition. Characterization of epitaxial layers by visual, mechanical, optical, electrical and chemical measurements will provide feedback for improvement. Prototype detectors will be fabricated to test speed, sensitivity and radiation hardness. The Phase II goals will be to refine the process conditions, develop silicon carbide detectors for the high energy physics community and to become a supplier of high quality silicon carbide layers on silicon substrates to commercial and government customers. Commercial Applications and Other Benefits as described by the awardee: High quality silicon carbide on silicon would be a technological leap for high-speed, high-power, high-temperature devices, and radiation hard devices and detectors. High speed/power devices present multi-million dollar commercial markets in communications and industrial power control. High temperature devices would be applied in "more electric" aircraft and space applications.